Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-02-17
2009-06-16
Chang, Joseph (Department: 2817)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23144, C331S1170FE, C331S1170FE
Reexamination Certificate
active
07547970
ABSTRACT:
A semiconductor device, including a semiconductor substrate having an element region on a surface thereof, an electrical element being formed in the element region; an insulating layer formed on the semiconductor substrate and covering the electrical element; and an inductor formed on the insulating layer and overlapping with the element region. In an exemplary embodiment, the element region is free from being overlapped by a center axis of the inductor. In another exemplary embodiment, the inductor includes a wiring region, a center region, and a wiring pattern formed in the wiring region and winding spirally to surround the center region, the element region being free from being overlapped by the center region. In a further exemplary embodiment, the inductor includes a voltage controlled oscillator, and the electrical element is electrically connected to the inductor and includes at least one of a varactor and a MOSFET.
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Ali Hajimiri et al., “Design Issues in CMOS Differential LC Oscillators”, IEEE Journal of Solid-State Circuit, vol. 34, No. 5, May 1999, pp. 717-724.
Japanese Office Action dated Jun. 17, 2008 (with partial English translation).
Muramatsu Yoshinori
Nakashiba Yasutaka
Chang Joseph
McGinn IP Law Group PLLC
NEC Electronics Corporation
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