Surface acoustic wave device

Details Surface acoustic wave device Surface acoustic wave device

2008-09-22

2009-08-04

Budd, Mark (Department: 2834)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

C310S31300R

Reexamination Certificate

active

07569972

ABSTRACT:
A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1):in-line-formulae description="In-line Formulae" end="lead"?θ=31.72−206.92×exp(−1×TAu/0.0138)  Formula (1)in-line-formulae description="In-line Formulae" end="tail"?where TAuis a value of Au electrode film thickness normalized with the wavelength λ.

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Kenji Nishiyama et al.: “Surface Acoustic Wave Device,” U.S Appl. No. 12/243,010, filed Oct. 1, 2008.
Official Communication issued in International Patent Application No. PCT/JP2007/057558, mailed on Jul. 17, 2007.

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