Solid state image sensor

Details Solid state image sensor Solid state image sensor

1983-11-30

1987-08-11

Wise, Robert E.

H01L 2714, H01L 3100

Patent

active

046865551

ABSTRACT:
A solid state image sensor comprising static induction transistors each forming a picture element.
Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.

REFERENCES:
patent: 4377817 (1983-03-01), Nishizawa et al.
patent: 4381517 (1983-04-01), Harada

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