Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-15
2009-11-10
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29117, C257SE29151, C257SE29273, C257SE29299, C438S164000, C349S042000, C349S043000, C349S048000
Reexamination Certificate
active
07615782
ABSTRACT:
The present invention relates to a thin film transistor substrate and a liquid crystal display panel for use in a liquid crystal display apparatus, and aims to provide a thin film transistor substrate and a liquid crystal display panel with good display quality. The thin film transistor substrate has a first sub-pixel electrode16and second sub-pixel electrode17arranged on the opposite sides of the gate bus line12, a first thin film transistor20athat establishes direct electrical connection with the first sub-pixel electrode16, and a second thin film transistor20bcapacitively coupled to the second sub-pixel electrode17. Since capacitance is formed where conventionally a source electrode and pixel electrode are connected via a contact hole, excessively opaque wiring is not required, which ensures sufficient effective area and transmittance of a pixel.
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Birch & Stewart Kolasch & Birch, LLP
Monbleau Davienne
Roland Christopher M
Sharp Kabushiki Kaisha
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