Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-11-18

2009-10-20

Hendricks, Keith D (Department: 1794)

Etching a substrate: processes

Gas phase etching of substrate

C216S067000

Reexamination Certificate

active

07604750

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and removing the etch remnants by using a gas of SF6as a main etch gas.

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Seong Yeol Mun et al., “Etch Defect Reduction Using . . . Poly Silicon Etch Process”, Japanese Journal of Applied Physics, vol. 44, No. 7A, Jul. 8, 2005, pp. 4891-4895.

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