Method for providing an endpoint layer for ion milling of...

Details Method for providing an endpoint layer for ion milling of... Method for providing an endpoint layer for ion milling of...

2005-09-29

2009-11-24

Cao, Allen T (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07623325

ABSTRACT:
A method for providing an endpoint layer for ion milling of top of read sensor having top lead connection and sensor formed thereby. A cap layer includes a thin layer of an endpoint detection material, such as a conductive or insulating material, that is inserted in the cap layer. The endpoint detection material provides a good signal for endpoint detection during ion milling of the of the cap layer.

REFERENCES:
patent: 6477013 (2002-11-01), Kang et al.
patent: 6685845 (2004-02-01), Wu et al.
patent: 6744608 (2004-06-01), Sin et al.
patent: 6815248 (2004-11-01), Leuschner et al.
patent: 6857947 (2005-02-01), Wang et al.
patent: 6870713 (2005-03-01), Shimazawa
patent: 6897532 (2005-05-01), Schwarz et al.
patent: 7405909 (2008-07-01), Gill
patent: 2002/0036877 (2002-03-01), Sakakima et al.
patent: 2002/0114112 (2002-08-01), Nakashio et al.
patent: 2002/0131209 (2002-09-01), Anaya-Dufresne et al.
patent: 2002/0191335 (2002-12-01), Santini
patent: 2003/0128483 (2003-07-01), Kamijo
patent: 2004/0166368 (2004-08-01), Gill et al.
patent: 2005/0068691 (2005-03-01), Kagami et al.
patent: 2005/0254180 (2005-11-01), Kanakasabapathy et al.
patent: 2006/0226940 (2006-10-01), Lee et al.
patent: 2007/0081279 (2007-04-01), Hong et al.
patent: 2007/0138002 (2007-06-01), Carey et al.
patent: 2007/0217085 (2007-09-01), Gill
Nagasaka—Giant Magnetoresistance Propertise of Specular Spin Valve Films in a Current Perpendicular to Plane Structure; Journal; Jun. 1, 2001;pp. 6943-6945; vol. 89, No. 11.

Affiliated with

Also associated with

Rating

Method for providing an endpoint layer for ion milling of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for providing an endpoint layer for ion milling of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for providing an endpoint layer for ion milling of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4056024