Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-02-05
2009-10-20
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C057S296000, C057S298000, C057S300000, C057S303000, C057S117000
Reexamination Certificate
active
07605410
ABSTRACT:
The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased.
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Kato Kiyoshi
Kuwabara Hideaki
Takano Tamae
Liu Benjamin Tzu-Hung
Ngo Ngan
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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