Semiconductor device for high frequency power amplification

Details Semiconductor device for high frequency power amplification Semiconductor device for high frequency power amplification

2005-12-27

2009-10-20

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S677000, C257S713000, C257SE23056

Reexamination Certificate

active

07605465

ABSTRACT:
A semiconductor device includes, a metal base plate, a semiconductor element mounted on the base plate, first and second dielectric plates are mounted on the base plate in the vicinity of the semiconductor element. The first and second dielectric plates are composed of such an insulator material as diamond having higher heat conductivity than that of the base plate material.

REFERENCES:
patent: 5492661 (1996-02-01), Weddigen et al.
patent: 2002/0105071 (2002-08-01), Mahajan et al.
patent: 2003/0015348 (2003-01-01), Lee et al.
patent: 2004/0251540 (2004-12-01), Eguchi et al.
patent: 2002-190540 (2002-07-01), None
U.S. Appl. No 12/296,624, filed Oct. 9, 2008, Takagi.

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