Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-06-18
2009-08-11
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S356000, C257SE29290, C257SE29293
Reexamination Certificate
active
07573067
ABSTRACT:
It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protective circuit and a second interlayer insulating film, which is an insulating coating film, is formed covering a wiring formed over the first interlayer insulating film, a wiring for connecting the TFT to other semiconductor elements is formed so as to be in contact with the surface of the second interlayer insulating film so as to secure a path discharging charge accumulated in the surface of the second interlayer insulating film. Note that the TFT used for the protective diode is a so-called diode-connected TFT in which either of the first terminal or the second terminal is connected to a gate electrode.
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Malsawma Lex
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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