Semiconductor device metallization process

Details Semiconductor device metallization process Semiconductor device metallization process

1988-05-02

1989-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437195, 437197, 437247, H01L 2100, H01L 2102, H01L 21283, H01L 21441

Patent

active

048371831

ABSTRACT:
A metallization process for semiconductor devices wherein the metal deposition steps are performed at higher wafer temperatures than subsequent processing steps. The correlation between wafer temperature and maximum grain width is prevalent in many metals used for semiconductor device metallization such as aluminum. Therefore, by measuring and controlling the maximum grain width of the deposited metal during metal deposition steps, it is possible to control and adjust the wafer temperature.

REFERENCES:
patent: 4381595 (1983-05-01), Denda et al.
Santoro, C. J., Thermal Cycling and Surface Reconstruction in Aluminum Thin Films, J. Electrochem. Soc. 116, p. 361 (1969).
Wolf, S., Silicon Processing for the VLSI Era, Chap. 10, pp. 367-379, Lattice Press, Sunset Beach, CA, 1986.

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