Optical semiconductor device and driving method thereof

Details Optical semiconductor device and driving method thereof Optical semiconductor device and driving method thereof

2005-10-17

2009-12-15

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S020000, C372S096000, C372S097000, C372S046010

Reexamination Certificate

active

07633984

ABSTRACT:
Objects are achieved by an optical semiconductor device comprising: a structure61including a substrate50, a diffraction grating52a, an active layer54and a refractive index control layer60; and an laser element100including an electrode92afor the active layer, an electrode92bfor the refractive index control layer and an electrode92cfor switching, wherein a pre-bias current is previously supplied from the electrode92afor the active layer to the active layer54in a state where a switching current is not supplied from the electrode92cfor switching to the active layer54, and then while a current Idrivefor activation is supplied from the electrode92afor the active layer to the active layer54, the laser element100is turned on by supplying the switching current Iswfrom the electrode92cfor switching to a part of the active layer54, as well as turning off the laser element100by halting the supply of the switching current Isw.

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R. Paoletti, et al.; “Small chip size, low power consumption, fully electronic controlled tunable laser source with 40 nm tuning range and 20 mW output power for WDM applications”;ECOC2003 Proceeding; vol. 4; p. 887-888 (1 Sheet total.).

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