Method for fabricating an interconnect for semiconductor devices

Details Method for fabricating an interconnect for semiconductor devices Method for fabricating an interconnect for semiconductor devices

1994-03-07

1995-09-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, H01L 2144

Patent

active

054496411

ABSTRACT:
A method for forming an interconnect film (of aluminum or aluminum alloy) by high-temperature sputtering such that the resulting film has a flat surface. The flat surface is desirable for the multilayer interconnect structure, relieves the resist film from halation at the time of exposure, and makes the interconnect immune to electromigration. The interconnect for semiconductor devices is fabricated from an underlying film, with crystals therein orienting in the direction perpendicular to the substrate surface, and an interconnect film formed on the underlying film, with crystals therein orienting in alignment with the orientation of crystals in the underlying film and in the direction perpendicular to the substrate surface. The underlying film may be a titanium film with its (002), (001), or (011) ) crystal plane orienting in the direction perpendicular to the substrate surface. The interconnect film may be an aluminum film or aluminum alloy film with its (111) crystal plane orienting in alignment with the orientation of crystals in the titanium film and in the direction perpendicular to the substrate surface.

REFERENCES:
patent: 4217153 (1980-08-01), Fukunaga et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5312772 (1994-05-01), Yokoyama et al.

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