Fabricating electrical contacts in semiconductor devices

Details Fabricating electrical contacts in semiconductor devices Fabricating electrical contacts in semiconductor devices

1991-07-19

1995-09-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437982, 437192, 437194, 437195, H01L 21443

Patent

active

054496403

ABSTRACT:
A method of fabricating an electrical contact in a semiconductor device comprises providing on an underlying silicon substrate a reflowable interlevel dielectric material having a contact opening exposing a contact region of the silicon substrate. The silicon substrate and the interlevel dielectric material are heated by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer in the contact region and to reflow the dielectric material. A layer of transition metal is deposited over the reflowed dielectric material and the control layer and at least part of the transition metal layer is converted into a metallurgic barrier.

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patent: 4784973 (1988-11-01), Stevens et al.
W. Kern et al., "Deposition Processes for BPSG Films," Ext. Abs of the Electrochem. Soc. Meeting, Fall 1988, Abstract #238, p. 333.
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, Calif., 1990, pp. 104, 105, 173.
S. Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach (1986) pp. 187-191.
C. Y. Ting, "Using TiN and Si.sub.3 N.sub.4 for VLSI Contacts", IBM Technical Disclosure Bulletin, Sep. 1981, New York pp. 1976-1977.
Cohen et al., "Rapid Thermal Processing of TiN and TiSi.sub.2 Films for VLSI Applications", Extended Abstracts/Spring Meeting, May 15-20, 1988, Princeton, New York, USA.

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