Semiconductor device, manufacturing method of semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S684000, C257S704000, C439S075000, C439S090000

Reexamination Certificate

active

07456483

ABSTRACT:
A bond portion for bonding the principal plane of a solid-state imaging element with a transparent covering portion and configuring a hollow portion therebetween is provided with: a first opening end portion on the hollow portion side; a second opening end portion on the outer side; and a trap portion. The first opening end portion, the trap portion and the second opening end portion constitute a vent path. The vent path is shaped not to connect the first opening end portion with the second opening end portion linearly but to connect the opening end portions in the bond portion via the trap portion larger than the opening end portions.

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Certification.

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