Method of forming a platinum pattern

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C252S079100

Reexamination Certificate

active

07470623

ABSTRACT:
A solution for platinum chemical mechanical polishing is disclosed. Further, a method for forming Pt patterns is disclosed which utilizes the disclosed Pt-CMP solution which contains an alkali aqueous solution and an oxidizer which improves the polishing rate and polishing characteristics of Pt which forms a lower electrode of a metal capacitor.

REFERENCES:
patent: 3436286 (1969-04-01), Lange
patent: 3764424 (1973-10-01), Sayko
patent: 4956313 (1990-09-01), Cote et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5938505 (1999-08-01), Morrison et al.
patent: 5957757 (1999-09-01), Berman
patent: 6143662 (2000-11-01), Rhoades et al.
patent: 6214728 (2001-04-01), Chan et al.
patent: 6244929 (2001-06-01), Russ et al.
patent: 6290736 (2001-09-01), Evans
patent: RE37786 (2002-07-01), Hirabayashi et al.
patent: 6555466 (2003-04-01), Laursen et al.
patent: 6576479 (2003-06-01), Chen et al.
patent: 6576554 (2003-06-01), Matsui et al.
patent: 2001-023940 (2001-01-01), None
patent: 2002-40091 (2002-05-01), None
patent: 2002-44062 (2003-06-01), None
Notice of Rejection from Korean Intellectual Property Office dated Jun. 30, 2004, with English translation (4 pages).
“Method for Planarizing Semiconductor Integrated Circuit and Chemical Mechanical Polishing Slurry Therefor”, Kazuo et al., Jan. 26, 2001, English translation by computer of JP 2001023940, 11 pages.
Semiconductor Integrated Circuit Flattening . . . Measurement of Exposed Layers, Kazuo et al., Jan. 26, 2001, English Abstract (Derwent) of JP 2001023940, 2 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming a platinum pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a platinum pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a platinum pattern will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4048856

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.