Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-26
2008-12-30
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C252S079100
Reexamination Certificate
active
07470623
ABSTRACT:
A solution for platinum chemical mechanical polishing is disclosed. Further, a method for forming Pt patterns is disclosed which utilizes the disclosed Pt-CMP solution which contains an alkali aqueous solution and an oxidizer which improves the polishing rate and polishing characteristics of Pt which forms a lower electrode of a metal capacitor.
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Notice of Rejection from Korean Intellectual Property Office dated Jun. 30, 2004, with English translation (4 pages).
“Method for Planarizing Semiconductor Integrated Circuit and Chemical Mechanical Polishing Slurry Therefor”, Kazuo et al., Jan. 26, 2001, English translation by computer of JP 2001023940, 11 pages.
Semiconductor Integrated Circuit Flattening . . . Measurement of Exposed Layers, Kazuo et al., Jan. 26, 2001, English Abstract (Derwent) of JP 2001023940, 2 pages.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Tran Binh X
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