Method for producing a semiconductor integrated circuit having a

Details Method for producing a semiconductor integrated circuit having a Method for producing a semiconductor integrated circuit having a

1987-09-04

1989-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 78, H01L 2131

Patent

active

048371785

ABSTRACT:
A compound semiconductor (e.g., GaAs) IC device structure includes: a compound semiconductor substrate having a semi-insulating compound surface region; an active element laminated layer formed on the surface region; an isolation region of a semi-insulating (intrinsic) compound semiconductor which is filled in a groove extending into the surface region through the laminated layer; and active elements formed in regions of the laminated layer, isolated by the filled groove.

REFERENCES:
patent: 4534824 (1985-08-01), Chen
patent: 4553152 (1985-11-01), Nishitani
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4575924 (1986-03-01), Reed et al.
patent: 4608696 (1986-08-01), Law et al.
patent: 4649411 (1987-03-01), Birrittella
Blum et al., IBM Tech. Disc. Bull., vol. 13, No. 9 (Feb. 1971), p. 2494.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor integrated circuit having a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor integrated circuit having a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor integrated circuit having a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-40489