Nonvolatile semiconductor storage device

Details Nonvolatile semiconductor storage device Nonvolatile semiconductor storage device

2006-11-29

2008-12-09

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185180

Reexamination Certificate

active

07463533

ABSTRACT:
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.

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