Method in the fabrication of an integrated injection logic...

Details Method in the fabrication of an integrated injection logic... Method in the fabrication of an integrated injection logic...

2005-10-06

2008-11-25

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

C438S338000, C257SE21610

Reexamination Certificate

active

07456069

ABSTRACT:
A method in the fabrication of an I2L circuit comprises (i) forming a common base of a lateral bipolar transistor and emitter of a vertical bipolar multicollector transistor, a common collector of the lateral transistor and base of the vertical multicollector transistor, and an emitter of the lateral transistor in a substrate; (ii) forming, from a first deposited polycrystalline layer, a contact region for the common collector/base and a contact region for the emitter of the lateral transistor; (iii) forming an isolation structure for electric isolation of the polycrystalline contact region for the common collector/base; and (iv) forming, from a second deposited polycrystalline layer, a contact region for the common base/emitter and multiple collectors of the vertical multicollector transistor.

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