Transfer method for forming a silicon-on-plastic wafer

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S458000, C438S459000, C438S475000, C438S558000, C257SE21482, C257SE21568

Reexamination Certificate

active

07459375

ABSTRACT:
A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.

REFERENCES:
patent: 6486008 (2002-11-01), Lee
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 2003/0186521 (2003-10-01), Kub et al.
patent: 2005/0140283 (2005-06-01), Lau et al.
patent: 2006/0197096 (2006-09-01), Kerdiles et al.
patent: 2006/0205180 (2006-09-01), Henley et al.
patent: 2008/0057675 (2008-03-01), Henley et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transfer method for forming a silicon-on-plastic wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transfer method for forming a silicon-on-plastic wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transfer method for forming a silicon-on-plastic wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4045644

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.