Making a buried channel FET with lateral growth over amorphous r

Details Making a buried channel FET with lateral growth over amorphous r Making a buried channel FET with lateral growth over amorphous r

1988-05-16

1989-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 84, 437 89, 437 97, 437 99, 437105, 437107, 437192, 437203, 437249, H01L 21265, H01L 21302

Patent

active

048371750

ABSTRACT:
A buried channel field effect transistor is provided by in situ growth of all epitaxial layers growing laterally towards each other along central amorphous semi-insulating humps (1222, 1224) and merging (1232) above the humps to epitaxially grow in single crystalline form to provide the active N layer (1232).

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