Solid state imaging device having transition time...

Details Solid state imaging device having transition time... Solid state imaging device having transition time...

2004-04-16

2008-12-23

Vu, Ngoc-Yen T (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S310000, C348S297000, C250S208100

Reexamination Certificate

active

07468750

ABSTRACT:
A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio.Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

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