Ion implanter and ion implantation control method thereof

Details Ion implanter and ion implantation control method thereof Ion implanter and ion implantation control method thereof

2006-08-11

2008-12-09

Nguyen, Kiet T (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07462847

ABSTRACT:
An ion implanter is provided with a system for monitoring parameters of the ion implanter in real time to control respective components in the ion implanter. This system is allowed to have a function of calculating an accumulated dose distribution during ion implantation treatment and correcting a mechanical scan speed of a wafer holding section in a Y direction so as to render an accumulated dose uniform, a function of changing a magnetic field of a mass analyzing section to thereby control a center position of an ion beam, and a function of varying a suppression voltage of an aperture and an ion beam current to control a diameter of the ion beam.

REFERENCES:
patent: 5811823 (1998-09-01), Blake et al.
patent: 62-071154 (1987-04-01), None
patent: 05-067449 (1993-03-01), None
patent: 06-275219 (1994-09-01), None
patent: 10-012179 (1998-01-01), None
patent: 10-116581 (1998-05-01), None
patent: 2001-167727 (2001-06-01), None
patent: 2002-042716 (2002-02-01), None
patent: 2004-356297 (2004-12-01), None

Affiliated with

Also associated with

Rating

Ion implanter and ion implantation control method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanter and ion implantation control method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanter and ion implantation control method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4045191