Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-07-27
2008-12-23
Jackson, Jr., Jerome (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000, C360S324200, C365S149000
Reexamination Certificate
active
07468542
ABSTRACT:
A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.
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Hayakawa Jun
Ikeda Shoji
Ohno Hideo
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Jackson, Jr. Jerome
Valentine Jami M
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