Semiconductor device and its manufacture method capable of...

Details Semiconductor device and its manufacture method capable of... Semiconductor device and its manufacture method capable of...

2007-03-01

2008-12-30

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S773000, C438S628000

Reexamination Certificate

active

07470987

ABSTRACT:
A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

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