Multi-layered copper line structure of semiconductor device...

Details Multi-layered copper line structure of semiconductor device... Multi-layered copper line structure of semiconductor device...

2006-05-12

2008-12-02

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S773000, C438S624000, C438S637000, C438S687000

Reexamination Certificate

active

07459787

ABSTRACT:
A multi-layered copper line structure of a semiconductor device with a lower copper line, an upper copper line, and a via contact, which electrically connects the lower copper line and the upper copper line, can incorporate one or more dummy via contacts to reduce the occurrence of voids in the via contacts. The one or more dummy via contacts can be formed adjacent the via contact and non-electrically connected to the lower copper line.

REFERENCES:
patent: 6468894 (2002-10-01), Yang et al.
patent: 2003/0116852 (2003-06-01), Watanabe et al.
patent: 2005/0136650 (2005-06-01), Tsuchida
patent: 2005/0142840 (2005-06-01), Fujimaki
patent: 2007/0093057 (2007-04-01), Chen et al.

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