Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-02
2008-12-30
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000, C438S638000, C438S639000
Reexamination Certificate
active
07470989
ABSTRACT:
This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
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Eddy, Jr. Charles R
Henry Richard L
Holm Ronald T
Koleske Daniel D
Peckerar Martin C
Hunnius Stephen T.
Karasek John J.
The United States of America as represented by The Secretary of
Toledo Fernando L
LandOfFree
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