Method for manufacturing transfer mask substrate, transfer...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S313000, C430S314000, C430S316000

Reexamination Certificate

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07465523

ABSTRACT:
To reduce a stress change generated in the production processes of a transfer mask to improve a position accuracy of a mask pattern.A production method of a transfer mask characterized by further including, in the production processes of the transfer mask, a step of forming on said thin film layer a stress control layer that cancels a stress change of the thin film layer generated in the production processes of the mask, prior to formation of said resist layer, and a step of carrying out etching using said resist pattern as an etching mask.

REFERENCES:
patent: 6381300 (2002-04-01), Ezaki
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patent: 2829942 (1998-09-01), None
patent: 2002-075836 (2002-03-01), None
patent: 2003-068615 (2003-03-01), None
International search report for PCT application No. PCT/JP03/14088, dated Feb. 24, 2004.
Tsuboi, S. et al, “X-Ray Mask Distortion Induced in Black-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect,” Jpn. J. Appl. Phys., vol. 35, part 1, No. 5A, pp. 2845-2850, May 1996.

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