Low-voltage reading device in particular for MRAM memory

Details Low-voltage reading device in particular for MRAM memory Low-voltage reading device in particular for MRAM memory

2008-02-19

2008-12-16

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S210130, C365S189070

Reexamination Certificate

active

07466595

ABSTRACT:
The invention relates to a circuit for reading a cell of a bit line, including first and second transistors for controlling the bit line and a reference line, respectively, a reference transistor connected to the second control transistor and a write transistor of the reference current connected to the first control transistor, for comparing the current of the bit line and the reference current, characterized in that a first intermediate transistor is connected to the write transistor parallel to the first control transistor, and in that a second intermediate transistor is connected between the gate and the drain of the reference transistor parallel to the second control transistor, and polarization transistors are connected in series, respectively, to the intermediate transistors so as to superimpose a current over the reference current.

REFERENCES:
patent: 5886925 (1999-03-01), Campardo et al.
patent: 5917753 (1999-06-01), Dallabora et al.
patent: 6055187 (2000-04-01), Dallabora et al.
patent: 6600690 (2003-07-01), Nahas et al.
patent: 0 805 454 (1997-11-01), None
French Search Report from corresponding French Application No. 0412194, filed Nov. 17, 2004.

Affiliated with

Also associated with

Rating

Low-voltage reading device in particular for MRAM memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-voltage reading device in particular for MRAM memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-voltage reading device in particular for MRAM memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4042383