Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-08-20
1999-06-15
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257241, 257249, 257250, H01L 27148, H01L 29768
Patent
active
059124822
ABSTRACT:
In a solid-state image pickup device having photoelectric converting sections, vertical charge transfer sections, and a horizontal charge transfer section, the vertical charge transfer sections include first, second, and third vertical charge transfer electrodes The third (final) vertical charge transfer electrode, which is adjacent to the horizontal charge transfer section, is electrically connected to a shunt wire (a first shading film) via lining contacts. A second shading film is formed electrically separated from the shunt wire, for light-shielding areas between photoelectric converting sections in a vertical direction.
REFERENCES:
patent: 5393997 (1995-02-01), Fukusho et al.
patent: 5399888 (1995-03-01), Nakashiba
NEC Corporation
Ngo Ngan V.
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