Heterojunction semiconductor device

Details Heterojunction semiconductor device Heterojunction semiconductor device

1996-06-18

1999-06-15

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257191, 257192, 257471, 257472, H01L 310328

Patent

active

059124806

ABSTRACT:
A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.

REFERENCES:
patent: 4484207 (1984-11-01), Nishizawa et al.
patent: 5608239 (1997-03-01), Miyamoto et al.
patent: 5635735 (1997-06-01), Miyamoto et al.
Brownm J.J. et al., "InP-Based HEMTs with Al.sub.x In.sub.1-x P Schottky Barrier Layers Grown by Gas-Source MBE" InP and Related Materials Conference, Santa Barbara, California, USA (1994) pp. 419-422.
Mishra, U.K. et al., "Microwave Performance of AlInAs-GaInAs HEMT's with 0.2-and 0.1-.mu.m Gate Length" IEEE Electron Device Letters (1988) 9(12):647-649.
Sze, S.M. Physics of Semiconductor Devices, Second Edition (1981) pp. 258-259.
Miller, T.J. et al., "Schottky barrier height modification on n-and p-type GaInP with thin interfacial Si" J. Appl. Phys. (1994) 76(12):7931-7934.

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