Magnetic random access memory (MRAM) having increased...

Details Magnetic random access memory (MRAM) having increased... Magnetic random access memory (MRAM) having increased...

2006-10-02

2008-11-04

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200

Reexamination Certificate

active

07446984

ABSTRACT:
A Magnetic Random Access Memory (MRAM) cell and array for storing data. The MRAM array includes a memory cell having a magnetic pinned layer, a magnetic free layer and a non-magnetic spacer or barrier layer sandwiched between the pinned and free layer. The pinned layer has magnetization that is pinned, and the free layer has a magnetization that is free to rotate but is stable in directions that are parallel or antiparallel with the magnetization of the pinned layer. The free layer has a magnetic anisotropy the maintains the stability of the free layer magnetization. The free layer anisotropy is induced by a surface roughness either in the surface of the free layer itself, or in the surface of the underling barrier/spacer layer. This anisotropic roughness is induced by an angled direct ion milling.

REFERENCES:
patent: 7189583 (2007-03-01), Drewes
patent: 2007-317734 (2007-12-01), None

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