Thin film integrated circuit including at least two P-type trans

Details Thin film integrated circuit including at least two P-type trans Thin film integrated circuit including at least two P-type trans

1997-11-07

1999-06-15

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257350, 257365, H01L 2976

Patent

active

059124741

ABSTRACT:
A P-channel thin film transistor is added to a CMOS circuit constituted of a P-channel thin film transistor and an N-channel thin film transistor. By utilizing a voltage drop in the inserted P-channel thin film transistor, the strength of an electric field in the vicinity of the drain of the original P-channel thin film transistor can be weakened, reducing its leak current. This enables suppression of the power consumption of the entire CMOS circuit.

REFERENCES:
patent: 5250835 (1993-10-01), Izawa
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5528056 (1996-06-01), Shimada et al.

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