Charged-particle-beam microlithography apparatus

Details Charged-particle-beam microlithography apparatus Charged-particle-beam microlithography apparatus

1997-07-11

1999-06-15

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, 250398, H01J 3730

Patent

active

059124695

ABSTRACT:
Apparatus are disclosed for performing microlithography using a charged-particle beam and a mask partitioned into multiple subfields to be transferred sequentially to a sensitive substrate. The apparatus comprise a charged-particle-beam illumination system, a charged-particle-beam projection system, and a beam-characteristics correction system situated between the charged-particle-beam source and the substrate. The beam-characteristics correction system is energizable to serve as either an illumination-characteristics correction means (e.g., a first set of coils situated between the source and the mask) or an imaging-characteristics correction means (a first or second set of coils situated between the mask and the substrate). An apparatus can include both first and second sets of coils (one before the mask, the other after the mask) serving to dynamically correct any variations arising in a transverse parameter (such a focus, astigmatism, deflection, and rotation) of the charged-particle beam as the beam exposes different transfer subfields on the substrate with respective mask subfields. Thus, the transverse parameter of the beam is constant regardless of how much the beam was deflected to reach any mask subfield relative to any other mask subfield.

REFERENCES:
patent: 5304811 (1994-04-01), Yamada et al.

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