Nitride-based semiconductor light emitting diode

Details Nitride-based semiconductor light emitting diode Nitride-based semiconductor light emitting diode

2006-10-17

2008-11-25

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C228S179100, C228S180100, C228S180210

Reexamination Certificate

active

07456438

ABSTRACT:
A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.

REFERENCES:
patent: 6331450 (2001-12-01), Uemura
patent: 7196000 (2007-03-01), Lee et al.
patent: 1635634 (2005-07-01), None
patent: 1659713 (2005-08-01), None
patent: 5-90329 (1993-04-01), None
patent: 10-2005-0029602 (2005-03-01), None

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