Magnetoresistive element and magnetic memory

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21665, C365S158000, C365S171000, C365S173000, C438S003000

Reexamination Certificate

active

07470963

ABSTRACT:
There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

REFERENCES:
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6028786 (2000-02-01), Nishimura
patent: 6172904 (2001-01-01), Anthony et al.
patent: 6211559 (2001-04-01), Zhu et al.
patent: 6798691 (2004-09-01), Ounadjela et al.
patent: 6980468 (2005-12-01), Ounadjela
patent: 2002/0130339 (2002-09-01), Kishi et al.
patent: 2003/0117840 (2003-06-01), Sharma et al.
patent: 2003/0151944 (2003-08-01), Saito
patent: 2003/0161181 (2003-08-01), Saito et al.
patent: 2004/0012994 (2004-01-01), Slaughter et al.
patent: 2004/0052006 (2004-03-01), Odagawa et al.
patent: 2005/0040447 (2005-02-01), Fukuzumi
patent: 2005/0276090 (2005-12-01), Yamagishi
patent: 2006/0083057 (2006-04-01), Nakayama et al.
patent: 2007/0012972 (2007-01-01), Nakayama et al.
patent: 2007/0070689 (2007-03-01), Ikegawa et al.
patent: 0 913 830 (1999-05-01), None
patent: 1 398 835 (2004-03-01), None
patent: 2001-015826 (2001-01-01), None
patent: 2001-267523 (2001-09-01), None
patent: 2002-26427 (2002-01-01), None
patent: 2002-43159 (2002-02-01), None
patent: 2002-280637 (2002-09-01), None
patent: 02/099906 (2002-12-01), None
patent: 02/103798 (2002-12-01), None
Tzu-Ning Fang, et al., “2D Write Addressability of Tunneling Junction MRAM Elements,” IEEE Transactions on Magnetics, vol. 37, No. 4, XP-001110930, Jul. 2001, pp. 1963-1966.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetoresistive element and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive element and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive element and magnetic memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4040504

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.