Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-08-30
2008-12-30
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE21665, C365S158000, C365S171000, C365S173000, C438S003000
Reexamination Certificate
active
07470963
ABSTRACT:
There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.
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Tzu-Ning Fang, et al., “2D Write Addressability of Tunneling Junction MRAM Elements,” IEEE Transactions on Magnetics, vol. 37, No. 4, XP-001110930, Jul. 2001, pp. 1963-1966.
Kai Tadashi
Kishi Tatsuya
Saito Yoshiaki
Takahashi Shigeki
Ueda Tomomasa
Ho Hoang-Quan
Huynh Andy
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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