Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-10-13
2008-12-30
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S199000, C257S532000, C257S296000, C257SE21008, C257SE21122, C438S238000, C438S240000, C438S257000, C438S381000
Reexamination Certificate
active
07470991
ABSTRACT:
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
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Gokhale Ashish V.
Larkin David L.
Saraiya Dhaval A.
Springer Lily X.
Takemura Makoto
Brady III Wade J.
Green Telly D
Smith Zandra
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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