Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-05-15
2008-12-09
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S774000, C257S783000, C257S618000, C257S622000, C257SE21499
Reexamination Certificate
active
07462931
ABSTRACT:
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.
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Innovative Micro Technology
Parekh Nitin
Spong Jaquelin K.
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