Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-02-09

2008-11-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C257SE21001, C438S285000

Reexamination Certificate

active

07456087

ABSTRACT:
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a first poly-SiGe layer being boron-doped and a second poly-SiGe layer being boron-doped. The substrate has two openings and the gate structure is disposed on the substrate between the openings. The spacer is disposed on the sidewalls of the gate structure and above a portion of the openings. The first poly-SiGe layer is disposed on the surface of the openings in the substrate. The second poly-SiGe layer is disposed on the first poly-SiGe layer, and the top of the second poly-SiGe layer is higher than the surface of the substrate. Moreover, the boron concentration in the first poly-SiGe layer is lower than that in the second poly-SiGe layer.

REFERENCES:
patent: 6599803 (2003-07-01), Weon et al.
patent: 6995054 (2006-02-01), Oda et al.
patent: 7172933 (2007-02-01), Huang et al.
patent: 7176481 (2007-02-01), Chen et al.
patent: 7364957 (2008-04-01), Thei et al.
patent: 2005/0148148 (2005-07-01), Cheng

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4037169