Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-09-20

2008-11-11

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185210, C365S203000, C365S210130

Reexamination Certificate

active

07450427

ABSTRACT:
A non-volatile semiconductor memory device includes a memory cell, and a reference cell including a same structure as the memory cell. A detecting circuit detects a timing when a voltage of a reference bit line connected with the reference cell becomes lower than or equal to a setting voltage, and generates a control signal in response to the detection of the timing. A sense amplifier senses and amplifies a difference between a voltage of a bit line connected with the memory cell and a reference voltage in response to the control signal.

REFERENCES:
patent: 5717640 (1998-02-01), Hashimoto
patent: 6094374 (2000-07-01), Sudo
patent: 6128226 (2000-10-01), Eitan et al.
patent: 6438035 (2002-08-01), Yamamoto et al.
patent: 6625062 (2003-09-01), Won et al.
patent: 2001-357687 (2001-12-01), None

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