Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-03-03
2008-11-18
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C438S692000, C438S693000, C438S723000
Reexamination Certificate
active
07452813
ABSTRACT:
A method of manufacturing a semiconductor device according to the present invention, comprising the steps of: forming a first insulating film on a substrate that is provided with a structure; forming a second insulating film on the first insulating film; polishing at least the second insulating film; forming a third insulating film on the polished second insulating film; and etching a remaining film including at least the second insulating film or the third insulating film so that an exposed surface of the second insulating film and the third insulating film is parallel with a surface of the substrate.
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Chen Kin-Chan
Elpida Memory Inc.
McGinn IP Law Group PLLC
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