Polishing pad and method for manufacture of semiconductor...

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S059000, C451S533000, C451S550000

Reexamination Certificate

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07470170

ABSTRACT:
The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).

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