Thin film transistor, integrated circuit, liquid crystal...

Details Thin film transistor, integrated circuit, liquid crystal... Thin film transistor, integrated circuit, liquid crystal...

2006-04-03

2008-11-25

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S142000, C257SE27100, C257SE29117

Reexamination Certificate

active

07456038

ABSTRACT:
A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

REFERENCES:
patent: 5691115 (1997-11-01), Okamoto et al.
patent: 2004/0234900 (2004-11-01), Schroeder
patent: 2006/0170836 (2006-08-01), Kondo et al.
patent: 1567068 (2008-08-01), None
patent: 2003-234285 (2003-08-01), None
“Ultrafine Machining Technique” issued Feb. 25, 1997, by Ohmsha.
Machine translation (furnished by the Chinese Patent Office website) of Reference BB.
Jul. 11, 2008 Office action issued against Chinese Patent Application No. 200610071921.2 which corresponds to U.S. Appl. No. 11/397,925.

Affiliated with

Also associated with

Rating

Thin film transistor, integrated circuit, liquid crystal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor, integrated circuit, liquid crystal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, integrated circuit, liquid crystal... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4032936