Silicon carbide semiconductor device

Details Silicon carbide semiconductor device Silicon carbide semiconductor device

2006-04-04

2008-12-30

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S077000, C257S329000, C257S341000

Reexamination Certificate

active

07470930

ABSTRACT:
A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The device includes: a trench on the silicon carbide layer to reach the silicon substrate; and a conductive layer in the trench between the silicon carbide layer and the silicon substrate to connect to both of them. The semiconductor element is a vertical type semiconductor element so that current flows on both of a top surface portion and a backside surface portion of the semiconductor substrate. The current flows through the conductive layer.

REFERENCES:
patent: 6218254 (2001-04-01), Singh et al.
patent: 6736894 (2004-05-01), Kawahara et al.
patent: 2002/0014640 (2002-02-01), Mitlehner et al.
patent: 2004/0084721 (2004-05-01), Kocon et al.
patent: 2004/0089910 (2004-05-01), Hirler et al.
patent: B2-2612040 (1990-01-01), None
patent: A-6-326064 (1994-11-01), None
patent: A-10-308511 (1998-11-01), None
patent: B2-3385938 (2003-01-01), None

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