Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2004-02-02
2008-11-04
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S101000, C257S436000, C257SE29277
Reexamination Certificate
active
07446346
ABSTRACT:
In a semiconductor substrate (1), impurity material, for example a metal, is distributed in a layer-like zone (3) in such a way that said zone reflects radiation (6), which is generated or detected by an optoelectronic component, for example. Said layer-like zone (3) is fabricated by implantation of the impurity material into the substrate (1) and subsequent heat treatment for crystallization of the impurity material. Such a substrate is suitable in particular for avoiding the penetration of radiation (6), which is generated for example by radiation-emitting structures (5) applied to the substrate, by reflection in a region of the substrate (1) near the surface and thus for reducing the absorption losses.
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Cohen Pontani Lieberman & Pavane LLP
Louie Wai-Sing
Osram Opto Semiconductor GmbH
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