Wirebond pad for semiconductor chip or wafer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

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C257S780000, C257S784000

Reexamination Certificate

active

07470997

ABSTRACT:
In the present invention, copper interconnection with metal caps is extended to the post-passivation interconnection process. Metal caps may be aluminum. A gold pad may be formed on the metal caps to allow wire bonding and testing applications. Various post-passivation passive components may be formed on the integrated circuit and connected via the metal caps.

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U.S. Appl. No. 10/445,558, filed May 27, 2003, “High Performance System-on-Chip Inductor Using Post Passivation Process”.

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