Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-10-24
2008-11-11
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S430000, C257SE21549
Reexamination Certificate
active
07449392
ABSTRACT:
A semiconductor device has a silicon substrate, in which an active region is formed between two device isolation films and a gate is formed on the surface of the active region. The silicon substrate has a laterally etched portion in the active region below the surface of the active region on the side near the device isolation film. An insulating film is formed on the laterally etched portion of the silicon substrate. A conductive electrode is formed on the insulating film, through which an external voltage is applied to adjust a threshold voltage. The device isolation film is formed on the conductive electrode. None or some pockets of vacant cavity is present between the device isolation film and the conductive electrode.
REFERENCES:
patent: 5373180 (1994-12-01), Hillenius et al.
patent: 6110798 (2000-08-01), Gonzalez et al.
patent: 6133116 (2000-10-01), Kim et al.
patent: 6342452 (2002-01-01), Coronel et al.
patent: 6784076 (2004-08-01), Gonzalez et al.
patent: 6972234 (2005-12-01), Madurawe et al.
patent: 7074692 (2006-07-01), Chen et al.
patent: 2003/0190766 (2003-10-01), Gonzalez et al.
patent: 1241027 (2000-01-01), None
patent: 1433060 (2003-07-01), None
English translation of Office Action issued by Chinese Patent Office on Nov. 23, 2007.
Ahn Jin Hong
Cho Jun Hee
Kim Yil Wook
Lee Sang Don
Park Sung Eon
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Quach Tuan N.
LandOfFree
Semiconductor device capable of threshold voltage adjustment... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device capable of threshold voltage adjustment..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of threshold voltage adjustment... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4029035