Method for controlling nonvolatile memory device

Details Method for controlling nonvolatile memory device Method for controlling nonvolatile memory device

2006-07-14

2008-12-02

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185140

Reexamination Certificate

active

07460405

ABSTRACT:
Data is written to a nonvolatile memory device having a memory region of four bits or larger in one memory cell sandwiched by a source and a drain with an improved accuracy. The nonvolatile memory device100includes four control gates114to117provided between a first and a second impurity-diffused regions106aand160bthat are provided separately from the semiconductor substrate, and a memory cell including memory regions106ato106dthat are counterpart of the control gates. A method for controlling the nonvolatile memory device100includes classifying the four control gates114to100into two groups of right and left sides, and then, applying a lower voltage to an impurity-diffused region that is further from a target memory region for injecting an electron and applying a higher voltage to an impurity-diffused region that is closer the target memory region, and moreover applying a higher voltage, the higher voltage being higher than voltages applied to other control gates.

REFERENCES:
patent: 7057931 (2006-06-01), Lutze et al.
patent: 2002/0067641 (2002-06-01), Ogura et al.
patent: 05-129564 (1993-05-01), None
patent: 2003-017600 (2003-01-01), None
An Experimental 4-Mbit CMOS EEPROM with a NAND-Structured Cell, Masaki Momodomi et al, IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989.

Affiliated with

Also associated with

Rating

Method for controlling nonvolatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling nonvolatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling nonvolatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027769