Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2005-07-26

2008-12-16

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S537000, C327S530000

Reexamination Certificate

active

07466186

ABSTRACT:
A semiconductor integrated circuit according to the present invention comprises an MOS substrate having a substrate region (MOS) and a source region separated from each other, a dummy MOS circuit substrate-separated from the MOS circuit and having a substrate region (dummy) and a source region (dummy) separated from each other, a substrate voltage generating circuit for generating a substrate voltage to be applied to the substrate region (MOS) and the substrate region (dummy), and a comparing circuit for measuring a current generated in the dummy MOS substrate, wherein an area ratio between the substrate region (dummy) and the source region (dummy) is substantially equal to an area ratio between the substrate region (MOS) and the source region (MOS).

REFERENCES:
patent: 5461338 (1995-10-01), Hirayama et al.
patent: 5672995 (1997-09-01), Hirase et al.
patent: 6466077 (2002-10-01), Miyazaki et al.
patent: 6778002 (2004-08-01), Miyazaki et al.
patent: 7245177 (2007-07-01), Fujita et al.
patent: 2001-156261 (2001-06-01), None

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