Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-01
2008-11-18
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S292000, C257SE29151, C257SE51005, C438S149000
Reexamination Certificate
active
07453087
ABSTRACT:
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
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patent: 6784007 (2004-08-01), Iwasaki et al.
patent: 2006/0138394 (2006-06-01), Den et al.
Kenji Nomura, et al., “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, Nov. 25, 2004, pp. 488-492.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hoang Quoc D
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