Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-07-27
2008-11-18
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C257S776000, C257SE23145, C257SE23169, C257SE23175, C257SE21627, C257SE21641
Reexamination Certificate
active
07453151
ABSTRACT:
A semiconductor structure and methods for forming the same. The semiconductor structure includes (a) a substrate; (b) a first semiconductor device on the substrate; (c) N ILD (Inter-Level Dielectric) layers on the first semiconductor device, wherein N is an integer greater than one; and (d) an electrically conductive line electrically coupled to the first semiconductor device. The electrically conductive line is adapted to carry a lateral electric current in a lateral direction parallel to an interfacing surface between two consecutive ILD layers of the N ILD layers. The electrically conductive line is present in at least two ILD layers of the N ILD layers. The electrically conductive line does not comprise an electrically conductive via that is adapted to carry a vertical electric current in a vertical direction perpendicular to the interfacing surface.
REFERENCES:
patent: 6074899 (2000-06-01), Voldman
patent: 6110824 (2000-08-01), Licata et al.
patent: 6127264 (2000-10-01), Bandyopadhyay et al.
patent: 6225207 (2001-05-01), Parikh
patent: 6498385 (2002-12-01), Daubenspeck et al.
patent: 6764919 (2004-07-01), Yu et al.
patent: 2004/0222529 (2004-11-01), Dostalik et al.
patent: 2005/0098896 (2005-05-01), Huang et al.
patent: 55141739 (1980-11-01), None
Feilchenfeld Natalie Barbara
He Zhong-Xiang
Liu Qizhi
Rainey BethAnn
Wang Ping-Chuan
International Business Machines - Corporation
Pham Thanh V
Sabo William D.
Schmeiser Olsen & Watts
LandOfFree
Methods for lateral current carrying capability improvement... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for lateral current carrying capability improvement..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for lateral current carrying capability improvement... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4026627